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FDME905PT - MOSFET

General Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

Key Features

  • Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A.
  • Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A.
  • Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • RoHS Compliant October 2013 General.

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FDME905PT P-Channel PowerTrench® MOSFET FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A „ Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant October 2013 General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.