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FDME910PZT - MOSFET

General Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

Key Features

  • Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A.
  • Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A.
  • Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • HBM ESD protection level > 2 kV typical (Note 3).
  • Free from halogenated compounds and antimony oxides.
  • RoHS Compliant February 2015 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ HBM ESD protection level > 2 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant February 2015 General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.