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BLV897 - UHF push-pull power transistor

Datasheet Summary

Description

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

Features

  • Internal input matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet preview – BLV897

Datasheet Details

Part number BLV897
Manufacturer NXP
File Size 101.37 KB
Description UHF push-pull power transistor
Datasheet download datasheet BLV897 Datasheet
Additional preview pages of the BLV897 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor FEATURES • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
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