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BLV857 - UHF linear push-pull power transistor

Datasheet Summary

Description

NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

The common emitters are connected to the flange.

Features

  • Internal input matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BLV857
Manufacturer NXP
File Size 138.80 KB
Description UHF linear push-pull power transistor
Datasheet download datasheet BLV857 Datasheet
Additional preview pages of the BLV857 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.
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