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BLV859 - UHF linear push-pull power transistor

Datasheet Summary

Description

NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.

It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.

Features

  • Double internal input and output matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BLV859
Manufacturer NXP
File Size 126.05 KB
Description UHF linear push-pull power transistor
Datasheet download datasheet BLV859 Datasheet
Additional preview pages of the BLV859 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.
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