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BLV88N30
N-channel Enhancement Mode Power MOSFET
• • •
Preliminary August . 2009
BVDSS RDS(ON) ID
300V 48mΩ 88A
300V 88A VDMOS ,、, PDP
( TC=25oC )
VDS VGS ID
IDR
( 1) ( 1)
: 1. PW<10us, duty cycle<1%
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300 + 30 88 176 88 176
V V A A A A
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BLV88N30
( TC=25C )
BVDSS RDS(ON) VGS(th) IDSS IGSS Ciss Coss Crss
- -
VGS=0V, ID=10mA VGS=10V, ID=20A VDS=VGS, ID=1mA VDS=300V, VGS=0V VGS= ± 30V
VDS=25V VGS=0V f = 1MHz
300
2 -
340 0.044 3.2
7500 710 37
-
0.048 4 10
±500 -
V Ω V uA nA pF pF pF
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BLV88N30
TO247
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