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K3386 - 2SK3386

General Description

designed for high current switching applications.

Key Features

  • Low On-state Resistance 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) 5 RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A).
  • Low Ciss : Ciss = 2100 pF TYP.
  • Built-in Gate Protection Diode.
  • TO-251/TO-252 package 2SK3386-Z TO-252 (TO-251).

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Full PDF Text Transcription for K3386 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3386. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed ...

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RIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3386 PACKAGE TO-251 FEATURES • Low On-state Resistance 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) 5 RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
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