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K3307 - SWITCHING N-CHANNEL POWER MOSFET

General Description

designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A).
  • Low Ciss: Ciss = 4650 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription for K3307 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3307. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed ...

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RIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 4650 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3307 TO-3P (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Drain Current (DC) Drain Current (pulse) Note1 ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 120 W Total Power Dissipation

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