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K3324 - 2SK3324

General Description

The 2SK3324 is N-Channel MOS FET device that

Key Features

  • a Low gate charge and excellent switching characteristics, and Designed for high voltage.

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Full PDF Text Transcription for K3324 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3324. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low ga...

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RIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3324 PACKAGE TO-3P FEATURES • Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.