Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3326. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3326 PACKAGE Isola...
View more extracted text
INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3326 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.
More Datasheets from NEC (now Renesas Electronics)