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K3365 - 2SK3365

General Description

designed for DC/DC converters application of notebook computers.

Key Features

  • Low on-resistance RDS(on)1 = 14 mΩ (MAX. ) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX. ) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX. ) (VGS = 4.0 V, ID = 15 A).
  • Low Ciss : Ciss = 1300 pF (TYP. ).
  • Built-in gate protection diode.

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Full PDF Text Transcription for K3365 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3365. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed ...

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RIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1300 pF (TYP.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K3366 2SK3366
K3304 2SK3304
K3306 SWITCHING N-CHANNEL POWER MOS FET
K3307 SWITCHING N-CHANNEL POWER MOSFET
K3322 2SK3322
K3324 2SK3324
K3326 2SK3326
K3353 2SK3353
K3377 2SK3377
K3385 2SK3385