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K3366 - 2SK3366

General Description

The 2SK3366 is N -Channel M OS Field Effect T ransistor designed for D C/DC converter application of notebook computers.

Key Features

  • Low on-resistance RDS(on)1 = 21 mΩ (MAX. ) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX. ) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX. ) (VGS = 4.0 V, ID = 10 A).
  • Low Ciss : Ciss = 730 pF (TYP. ).
  • Built-in gate protection diode.

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Full PDF Text Transcription for K3366 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3366. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N -Channel M OS Field Effect T ransistor design...

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RIPTION The 2SK3366 is N -Channel M OS Field Effect T ransistor designed for D C/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V GS = 0 V) Gate to Source Voltage (V DS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT

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