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XP1008 - GaAs MMIC Power Amplifier

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 80,175,750 mA +0.3 VDC +12 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3 (3) Channel temperature a

Features

  • Excellent Linear Output Amplifier Stage 31.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +38.5 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lit.

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Datasheet Details

Part number XP1008
Manufacturer Mimix Broadband
File Size 185.98 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1008 Datasheet
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11.0-16.0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 P1008 Chip Device Layout Features Excellent Linear Output Amplifier Stage 31.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +38.5 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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