XP1006
Features
X-Band 10W Power Amplifier 21.0 d B Large Signal Gain +40.0 d Bm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 8.5-11.0 GHz Ga As MMIC power amplifier has a large signal gain of 21.0 d B with a +40.0 d Bm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m Ga As PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive .. epoxy or eutectic solder die attach process. This device is well suited for radar applications.
Chip Device Layout
XP1006 MIMIX BROADBAND 10004966 TNO COPYRIGHT 2005 X=4940 Y=4290
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)...
