XP1001
Features
High Linearity Wideband Amplifier On-Chip Temperature pensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 d B Small Signal Gain +31.0 d Bm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s two stage 26.0-40.0 GHz Ga As MMIC power amplifier is optimized for linear operation with a third order intercept point of +31.0 d Bm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature pensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and .. provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well...
