XP1005-BD
Features
- Excellent Saturated Output Stage
- Balanced Design Provides Good Output Match
- 26.0 d B Small Signal Gain
- +24.0 d Bm Saturated Output Power
- 100% On-Wafer RF, DC and Output Power
Testing
- 100% mercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
- Ro HS- pliant and 260°C Reflow patible
Description
M/A- Tech’s four stage 35.0-43.0 GHz Ga As MMIC power amplifier has a small signal gain of 26.0 d B with a +24.0 d Bm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A- Tech’s Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications.
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