Datasheet4U Logo Datasheet4U.com

RFG75N05E - N-Channel Power MOSFET

Features

  • 75A, 50V.
  • rDS(ON) = 0.008Ω.
  • Electrostatic Discharge Rated.
  • UIS Rating Curve (Single Pulse).
  • 175oC Operating Temperature.
  • Temperature Compensated PSPICE® Model Provided Symbol D Ordering Information PART NUMBER RFG75N05E.

📥 Download Datasheet

Datasheet preview – RFG75N05E

📁 Similar Datasheet

  • RFG70N06 - Power MOSFET (Fairchild Semiconductor)
  • RFG70N06 - N-Channel MOSFET (Harris)
  • RFG70N06 - N-Channel MOSFET (INCHANGE)
  • RFG30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
  • RFG30P06 - P-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG40N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG45N06 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N05L - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N06 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N06 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs (Harris)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RFG75N05E Data Sheet July 1999 File Number 2275.5 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09821. Features • 75A, 50V • rDS(ON) = 0.
Published: |