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RFG40N10 - N-Channel Power MOSFET

Features

  • 40A, 100V.
  • rDS(ON) = 0.040Ω.
  • UIS Rating Curve.
  • SOA is Power Dissipation Limited.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFG40N10 RFP40N10 RF1S40N10 RF1S40N10SM.

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RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9846 Features • 40A, 100V • rDS(ON) = 0.
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