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RFG50N05L - N-Channel Power MOSFET

Features

  • 50A, 50V.
  • rDS(ON) = 0.022Ω.
  • UIS SOA Rating Curve (Single Pulse).
  • Design Optimized for 5V Gate Drive.
  • Can be Driven Directly from CMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Sol.

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Full PDF Text Transcription

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RFG50N05L, RFP50N05L Data Sheet January 2002 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors.
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