Datasheet4U Logo Datasheet4U.com

RFG30P06 - P-Channel Power MOSFET

Features

  • 30A, 60V.
  • rDS(ON) = 0.065Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG30P06 RFP30P06 RF1S30P06SM.

📥 Download Datasheet

Datasheet preview – RFG30P06

📁 Similar Datasheet

  • RFG30P06 - P-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
  • RFG40N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG45N06 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N05L - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N06 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG50N06 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs (Harris)
  • RFG570A5-AYW-DNS - TFT Display (Raystar)
  • RFG60P03 - P-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG60P05E - P-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Features • 30A, 60V • rDS(ON) = 0.
Published: |