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RFG70N06 - N-Channel Power MOSFET

Features

  • 70A, 60V.
  • rDS(on) = 0.014Ω.
  • Temperature Compensated PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG70N06 RFP70N06 RF1S70N06SM.

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Other Datasheets by Intersil Corporation

Full PDF Text Transcription

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RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 File Number 3206.5 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49007. Features • 70A, 60V • rDS(on) = 0.
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