Datasheet4U Logo Datasheet4U.com

RFG70N06 - N-Channel MOSFET

Features

  • With TO-247 packaging.
  • UIS rating curve.
  • Peak current vs pulse width curve.
  • High power and current handling capability.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – RFG70N06

📁 Similar Datasheet

  • RFG70N06 - Power MOSFET (Fairchild Semiconductor)
  • RFG70N06 - N-Channel Power MOSFET (Intersil Corporation)
  • RFG70N06 - N-Channel MOSFET (Harris)
  • RFG75N05E - N-Channel Power MOSFET (Intersil Corporation)
  • RFG30P05 - P-Channel Power MOSFET (Intersil Corporation)
  • RFG30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
  • RFG30P06 - P-Channel Power MOSFET (Intersil Corporation)
  • RFG30P06 - P-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG40N10 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFG40N10 - N-Channel Power MOSFET (Intersil Corporation)
Other Datasheets by INCHANGE

    Full PDF Text Transcription

    Click to expand full text
    Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current switching applications INCHANGE Semiconductor RFG70N06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 70 IDM Drain Current-Single Pulsed 450 PD Total Dissipation 150 Tch Max.
    Published: |