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IRHMS57Z60 - RADIATION HARDENED POWER MOSFET

Datasheet Summary

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Lin.

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PD-96961B IRHMS57Z60 RADIATION HARDENED JANSR2N7478T1 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697 Product Summary 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57Z60 100K Rads (Si) 0.0055Ω 45A* JANSR2N7478T1 IRHMS53Z60 300K Rads (Si) 0.0055Ω 45A* JANSF2N7478T1 IRHMS54Z60 500K Rads (Si) 0.0055Ω 45A* JANSG2N7478T1 IRHMS58Z60 1000K Rads (Si) 0.0055Ω 45A* JANSH2N7478T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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