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Provisional Data Sheet No. PD-9.1252B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
®
IRHM2C50SE IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.60Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
IRHM2C50SE Datasheet
