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PD - 94605
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A
IRHMS597260 200V, P-CHANNEL
4 #
TECHNOLOGY
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Low-Ohmic TO-254AA
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHMS593260 Datasheet
