Datasheet4U Logo Datasheet4U.com

IRHMS57163SE - RADIATION HARDENED POWER MOSFET

Datasheet Summary

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Lin.

📥 Download Datasheet

Datasheet preview – IRHMS57163SE
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD-95840A IRHMS57163SE RADIATION HARDENED JANSR2N7475T1 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57163SE 100K Rads (Si) 0.0155Ω 45A* JANSR2N7475T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
Published: |