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PD - 93880B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A*
IRHM57260SE 200V, N-CHANNEL
4 #
TECHNOLOGY
c
TO-254AA
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57260SE Datasheet
