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IRHMS57064 - RADIATION HARDENED POWER MOSFET

Datasheet Summary

Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Units 45.
  • 45.
  • A 180.

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PD-95838C IRHMS57064 RADIATION HARDENED JANSR2N7470T1 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/698 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1 IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1 IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1 IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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