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IRGP6650D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP6650D-EPbF datasheet PDF (IRGP6650DPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for insulated gate bipolar transistor.

Features

  • Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of.

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Note: The manufacturer provides a single datasheet file (IRGP6650DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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