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IRGP20B120UD-E - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast Non Punch Through (NPT) Technology.
  • Low Diode VF (1.67V Typical @ 20A & 25°C).
  • 10 µs Short Circuit Capability.
  • Square RBSOA.
  • UltraSoft Diode Recovery Characteristics.
  • Positive VCE(on) Temperature Coefficient.
  • Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25°C E N-channel Benefits.
  • Benchmark Efficiency Above 20KHz.
  • Optimized for Welding.

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Datasheet preview – IRGP20B120UD-E

Datasheet Details

Part number IRGP20B120UD-E
Manufacturer IRF
File Size 148.42 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGP20B120UD-E Datasheet
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PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • UltraSoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.
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