Click to expand full text
Previous Datasheet
Index
Next Data Sheet
PD - 9.781A
IRGP420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz)
C
UltraFast IGBT
VCES = 500V
G E
See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 7.5A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGP420U Datasheet
