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IRGP4266PBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4266PBF, a member of the IRGP4266-EPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.5µs short circuit SOA Lead-Free, RoHS compliant Base part number IRGP4266PbF IRGP4266-EPbF Package Type TO-247AC TO-247AD  Benefits High efficiency in a wide range of.

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IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  Inverters  UPS  Welding G E C G G C G E C G IRGP4266-EPbF TO-247AD E n-channel G Gate IRGP4266PbF TO-247AC C Collector E Emitter Features Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.
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