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VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
G
E
n-channel
G Gate
GCE
IRGP4263DPbF TO‐247AC
C Collector
E GC
IRGP4263D‐EPbF TO‐247AD
E Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.
IRGP4263DPbF Datasheet
