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IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4266D-EPbF, a member of the IRGP4266DPbF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF  TO‐247AC  C Collector E GC IRGP4266D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

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Full PDF Text Transcription

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  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
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