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IRGP4263D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4263D-EPbF, a member of the IRGP4263DPbF Insulated Gate Bipolar Transistor family.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

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  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel G Gate GCE IRGP4263DPbF  TO‐247AC  C Collector E GC IRGP4263D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.
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