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IRGP20B120U-E - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast Non Punch Through (NPT) Technology.
  • 10 µs Short Circuit capability.
  • Square RBSOA.
  • Positive VCE(on) Temperature Coefficient.
  • Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits.
  • Benchmark efficiency above 20KHz.
  • Optimized for Welding, UPS, and Induction Heating.

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Datasheet Details

Part number IRGP20B120U-E
Manufacturer IRF
File Size 106.35 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGP20B120U-E Datasheet
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PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating applications • Rugged with UltraFast performance • Low EMI • Significantly Less Snubber required • Excellent Current sharing in Parallel operation • Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EAS @ TC =25°C Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.
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