Datasheet4U Logo Datasheet4U.com

IRGP6630DPbF - Insulated Gate Bipolar Transistor

Features

  • Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP20B60PD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP6630D-EPbF Insulated Gate Bipolar Transistor
IRGP6650D-EPbF Insulated Gate Bipolar Transistor
IRGP6650DPBF Insulated Gate Bipolar Transistor
IRGP6660D-EPbF Insulated Gate Bipolar Transistor
IRGP6660DPBF Insulated Gate Bipolar Transistor

Full PDF Text Transcription

Click to expand full text
  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
Published: |