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IRGP6630D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP6630D-EPbF datasheet PDF. This datasheet also covers the IRGP6630DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP6630DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP6630DPbF Insulated Gate Bipolar Transistor
IRGP6650D-EPbF Insulated Gate Bipolar Transistor
IRGP6650DPBF Insulated Gate Bipolar Transistor
IRGP6660D-EPbF Insulated Gate Bipolar Transistor
IRGP6660DPBF Insulated Gate Bipolar Transistor

Full PDF Text Transcription

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  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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