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IRF6619TRPbF - DirectFET Power MOSFET

Download the IRF6619TRPbF datasheet PDF (IRF6619PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 160 140 ID , Drain Current (A).

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Note: The manufacturer provides a single datasheet file (IRF6619PbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS 20V max VGS RDS(on) RDS(on) ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V Qg tot Qgd 13nC Qgs2 3.5nC Qrr 18nC Qoss 22nC Vgs(th) 2.0V 38nC Applicable DirectFET Outline and Substrate Outline (see p.
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