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IRF6611 - DirectFET Power MOSFET

Description

The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

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Full PDF Text Transcription

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PD - 96978A IRF6611 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching above 1MHz Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 37nC 12nC 3.3nC 16nC 23nC 1.7V Optimized for SyncFET Socket of Sync. Buck Converter Low Conduction Losses Compatible with Existing Surface Mount Techniques MX Applicable DirectFET Outline and Substrate Outline (see p.
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