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IRF6611PbF - DirectFET Power MOSFET

Description

The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • rce Voltage (V) VGS(th) Gate threshold Voltage (V) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 ID, Drain Current (A) ID = 50µA T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1400 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 1200 1000 800 600 400 200 0 25 50 75 ID 11A 13A BOTTOM 22A TOP 100 125 150 Starting T J , Junctio.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6611 DirectFET Power MOSFET
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IRF6610 HEXFET Power MOSFET Silicon Technology
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Full PDF Text Transcription

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PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 12nC RDS(on) Qgs2 3.3nC RDS(on) Qoss 23nC 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qrr 16nC Vgs(th) 1.7V 37nC Applicable DirectFET Outline and Substrate Outline (see p.
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