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IRF6610 - HEXFET Power MOSFET Silicon Technology

Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 50 40 30 20 10 0 25 50 75 3.6.

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PD - 97012 www.DataSheet4U.com IRF6610 RDS(on) Qoss 5.9nC DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 3.6nC RDS(on) Qgs2 1.3nC 20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V Qrr 6.4nC Vgs(th) 2.1V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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