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IRF6611TRPbF - DirectFET Power MOSFET

Download the IRF6611TRPbF datasheet PDF (IRF6611PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • rce Voltage (V) VGS(th) Gate threshold Voltage (V) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 ID, Drain Current (A) ID = 50µA T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1400 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 1200 1000 800 600 400 200 0 25 50 75 ID 11A 13A BOTTOM 22A TOP 100 125 150 Starting T J , Junctio.

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Note: The manufacturer provides a single datasheet file (IRF6611PbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 12nC RDS(on) Qgs2 3.3nC RDS(on) Qoss 23nC 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Qrr 16nC Vgs(th) 1.7V 37nC Applicable DirectFET Outline and Substrate Outline (see p.
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