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IRF6619PbF - DirectFET Power MOSFET

Description

The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 160 140 ID , Drain Current (A).

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Full PDF Text Transcription

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IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS 20V max VGS RDS(on) RDS(on) ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V Qg tot Qgd 13nC Qgs2 3.5nC Qrr 18nC Qoss 22nC Vgs(th) 2.0V 38nC Applicable DirectFET Outline and Substrate Outline (see p.
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