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PTFB212507SH - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Single-carrier WCDMA, 3GPP Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz -15 -20 IMD Low -25 IMD Up -30 Efficiency 45 40 35 30 -35 25 -40 20 -45 15 -50 10 -55.

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Datasheet Details

Part number PTFB212507SH
Manufacturer Infineon
File Size 189.71 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB212507SH Datasheet

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Full PDF Text Transcription

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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Single-carrier WCDMA, 3GPP Drive-up VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.
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