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PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB212503FL datasheet PDF. This datasheet also covers the PTFB212503EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

  • include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB212503FL Package H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -15 -20 ACPR IMD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB212503EL-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB212503FL
Manufacturer Infineon
File Size 447.99 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB212503FL Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET
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PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB212503FL Package H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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