Datasheet4U Logo Datasheet4U.com

PTFB241402F - High Power RF LDMOS Field Effect Transistor

Description

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band.

Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.

Features

  • Broadband internal matching.
  • Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%.
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers.
  • Integrated ESD protection.
  • Excellent thermal stability.

📥 Download Datasheet

Datasheet Details

Part number PTFB241402F
Manufacturer Infineon
File Size 439.18 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFB241402F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFB201402FC High Power RF LDMOS Field Effect Transistor Infineon
PTFB201402FC High Power RF LDMOS Field Effect Transistor Wolfspeed
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET Infineon
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs Infineon

Other Datasheets by Infineon

Part Number Description
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB183408SV High Power RF LDMOS Field Effect Transistor
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB241402F Package H-37248-4 Gain (dB) Efficiency (%) CW Performance, Single Side VDD = 30 V, IDQ = 660 mA 17.4 60 17.2 55 17.0 50 16.8 Gain 16.6 45 40 16.4 35 16.2 16.0 2320 MHz 2350 MHz 15.8 Efficiency 2380 MHz 30 25 20 15.
Published: |