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PTFB201402FC - High Power RF LDMOS Field Effect Transistor

Description

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.

It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band.

Features

  • Broadband internal matching.
  • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%.
  • Integrated ESD protection.
  • Excellent thermal stability.
  • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s.

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Datasheet Details

Part number PTFB201402FC
Manufacturer Infineon
File Size 412.16 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFB201402FC Datasheet

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Full PDF Text Transcription

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PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 650 mA 21.0 20.5 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.
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