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PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB182503FL datasheet PDF. This datasheet also covers the PTFB182503EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

  • include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB182503EL-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB182503FL
Manufacturer Infineon
File Size 435.94 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB182503FL Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB183408SV High Power RF LDMOS Field Effect Transistor
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

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PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 1842 MHz, 3GPP WCDMA signal, PAR = 7.
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