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PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -20 -25 -30 -35 -40 -45 -50 -55 -60 36 40 Efficiency 35 3.

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Datasheet Details

Part number PTFB193404F
Manufacturer Infineon
File Size 434.69 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB193404F Datasheet

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Full PDF Text Transcription

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PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.
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